6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.72ohm; Rds(on) Test Volta; Available until stocks are exhausted.MOSFET, N-CH, 500V, 7.6A, SOT-223-3; Transistor Polarity:N Channel; Continuous Drain Current Id:7.
06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:5W; Transistor Case Style:SOT-223; No.6A, SOT-223-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):3.
MOSFET, N-CH, 600V, 5A, SOT-223-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:5W; Transistor Case Style:SOT-223; No. Infineon Ipn60R1K5Ceatma1.
TRANSISTOR, RF, AUTO, NPN, SOT-323-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:175mW; DC Collector Current:20mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT-323; No. Infineon Bfr181Wh6327Xtsa1.
TRANSISTOR, RF, AUTO, NPN, SOT-323-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:175mW; DC Collector Current:20mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT-323; No.
MOSFET, N-CH, 30V, 40A, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0. Infineon Bsz100N03Msgatma1.0091ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:30W; Transistor Case Style:PG-TSDSON; No.
TRANSISTOR, RF, AEC-Q101, NPN, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:450mW; DC Collector Current:65mA; DC Current Gain hFE:100hFE; R.
7A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5.MOSFET, N-CH, 800V, 5.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No.
Infineon Bsz100N03Msgatma1.0091ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:30W; Transistor Case Style:PG-TSDSON; No.
TRANSISTOR, RF, AEC-Q101, NPN, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:450mW; DC Collector Current:65mA; DC Current Gain hFE:100hFE; R.
85V; Power Dissipation Pd:78W; Transistor Case Style:PG-TDSON; No.02ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.MOSFET, N-CH, 100V, 40A, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0. Infineon Bsc265N10Lsfgatma1.
Infineon Bsc050N03Lsgatma1.0042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:50W; Transistor Case Style:PG-TDSON; No.