of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC849C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:420; No.. Nexperia Bc849C,215 TRANSISTOR, NPN, 30V, 0.
Rohm 2Sar586D3Tl1.TRANS, PNP, -80V, -5A, 150DEG C, 10W; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:200MHz; Power Dissipation Pd:10W; DC Collector Current:-5A; DC Current Gain hFE:120hFE; Transistor Case Style:TO-252; No.
25V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:4A; Operating Temperature Max:150°C; Diode Case Style:SOT-323; No. Nexperia Bav70W,115.
19ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:208W; Transistor Case Style:TO-263; No. Infineon Spb20N60C3Atma1 MOSFET, N, COOLMOS, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:20.of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:20..
.of Pins:3Pins; Operating Temperature Max:150°C; Product Range:BC817 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):700mV; Continuous Collector Current Ic Max:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:100mA; Device Marking:BC817; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:100; No. Nexperia Bc817,215 TRANSISTOR, NPN, 45V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.
215A, 100V, SOT-23; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):215mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:4A; Operating Temperature Max:150°C; Diode Case Style:TO-236AB; No.DIODE, DUAL, 0. Nexperia Bav70,215.
Nexperia Bc846,215 TRANSISTOR, NPN, 65V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:110hFE; Transistor Case Style:SOT-23; No..of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC846; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:110; Hfe Typ:125; No.
5V; Peak Gate Power:1W; Peak Non Rep Surge Current Itsm 50Hz:60A; Holding Current Max Ih:50mA; No. Stmicroelectronics Bta06-600Bwrg.TRIAC, 6A, 600V, TO-220AB; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current IT(rms):6A; Triac Case Style:-; Gate Trigger Current Max (QI), Igt:50mA; Gate Trigger Voltage Max Vgt:1.
1A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:110hFE; Transistor Case Style:SOT-23; No. Nexperia Bc846A,215 TRANSISTOR, BJT, NPN, 65V, 0.of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC846A; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:110; No.
1A, 150DEG C; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-50V; Power Dissipation Pd:150mW; DC Collector Current:-100mA; DC Current Gain hFE:120hFE; Transistor Case Style:SOT-563; No.TRANS, DUAL PNP, -50V, -0.
of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):650mV; Continuous Collector Current Ic Max:100mA; Current Ic @ Vce Sat:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; External Depth:2..6mm; External Length / Height:1mm; External Width:2.
Nexperia Bc846B,215 TRANSISTOR, NPN, 65V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-23; No.of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC846B; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:200; No.
Nexperia Bat721A,215.DIODE, SCHOTTKY, DUAL; Diode Configuration:Dual Common Anode; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):200mA; Forward Voltage VF Max:550mV; Forward Surge Current Ifsm Max:1A; Operating Temperature Max:150°C; Diode Case Style:SOT-23; No.
Nexperia Bc807-40,215 TRANSISTOR, PNP, 45V, 0.5A, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:80MHz; Power Dissipation Pd:250mW; DC Collector Current:-500mA; DC Current Gain hFE:250hFE; Transistor Case Style:TO-236AB; No..
THYRISTOR, 50A, 800V, TOP3; Peak Repetitive Off-State Voltage, Vdrm:800V; Gate Trigger Current Max, Igt:80mA; Current It av:32A; On State RMS Current IT(rms):50A; Thyristor Case Style:TOP-3; No. Stmicroelectronics Btw69-800Rg.
RECTIFIER, SINGLE, 8A, 1KV, TO-263; Repetitive Reverse Voltage Vrrm Max:1kV; Forward Current If(AV):8A; Diode Configuration:Single; Forward Voltage VF Max:2V; Reverse Recovery Time trr Max:85ns; Forward Surge Current Ifsm Max:60A; Operating Temperature Max:175°C; Diode Case Style:TO-263; No. Stmicroelectronics Stth810G-Tr.
of Pins:3Pins; Operating Temperature Max:150°C; Product Range:BC847 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC847; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:110; Hfe Typ:125; No.., NPN, 45V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:110hFE; Transistor Case Style:SOT-23; No. Nexperia Bc847,215 TRANSISTOR,BIPOL.