004ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1. Nexperia Psmn5R2-60Ylx.7V; Power Dissipation Pd:195W; Transistor Case Style:SOT-669; No.
006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1. Nexperia Psmn7R5-60Ylx.MOSFET, N-CH, 60V, 86A, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:86A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.
MOSFET, N-CH, 60V, 53A, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0108ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1. Nexperia Psmn013-60Ylx.
004ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.MOSFET, N-CH, 60V, 100A, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0. Nexperia Psmn5R2-60Ylx.7V; Power Dissipation Pd:195W; Transistor Case Style:SOT-669; No.
Nexperia Psmn5R6-60Ylx.MOSFET, N-CH, 60V, 100A, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.7V; Power Dissipation Pd:167W; Transistor Case Style:SOT-669; No.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.
7V; Power Dissipation Pd:147W; Transistor Case Style:SOT-669; No.0113ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.MOSFET, N-CH, 80V, 62A, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.
125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:3.MOSFET, AUTO, N-CH, 60V, 2.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0. Vishay Sq2308Ces-T1_Ge3.
Vishay Sqj431Ep-T1_Ge3.MOSFET, AEC-Q101, P-CH, -200V, -12A; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.178ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:83W; Transistor Case Style:PowerPAK SO; No.