Nexperia Bc847,215 TRANSISTOR,BIPOL., NPN, 45V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:110hFE; Transistor Case Style:SOT-23; No..
DIODE, DUAL, 0.25V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:4A; Operating Temperature Max:150°C; Diode Case Style:TO-236AB; No.
Stmicroelectronics Bta06-600Bwrg.TRIAC, 6A, 600V, TO-220AB; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current IT(rms):6A; Triac Case Style:-; Gate Trigger Current Max (QI), Igt:50mA; Gate Trigger Voltage Max Vgt:1.5V; Peak Gate Power:1W; Peak Non Rep Surge Current Itsm 50Hz:60A; Holding Current Max Ih:50mA; No.
5A, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:80MHz; Power Dissipation Pd:250mW; DC Collector Current:-500mA; DC Current Gain hFE:250hFE; Transistor Case Style:TO-236AB; No.
.5V, SOT-23-3; Voltage Reference Type:Shunt - Fixed; Product Range:ZRC250 Series; Reference Voltage:2.of Pins:3Pins; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Base Number:250; Device Marking:ZRC250F02TA; Junction Temperature Tj Max:85°C; Junction Temperature Tj Min:-40°C; Logic Function Number:250; Operating Temperature Range:-40°C to +85°C; Reference Volt Tolerance ±%:2%; Reference Volts:2. Diodes Inc.
of Pins:3Pins; Operating Temperature Max:150°C; Product Range:BC817 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):700mV; Continuous Collector Current Ic Max:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:100mA; Device Marking:BC817; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:100; No. Nexperia Bc817,215 TRANSISTOR, NPN, 45V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No..
THYRISTOR, 50A, 800V, TOP3; Peak Repetitive Off-State Voltage, Vdrm:800V; Gate Trigger Current Max, Igt:80mA; Current It av:32A; On State RMS Current IT(rms):50A; Thyristor Case Style:TOP-3; No.
.19ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:208W; Transistor Case Style:TO-263; No. Infineon Spb20N60C3Atma1 MOSFET, N, COOLMOS, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:20.
Nexperia Bc846,215 TRANSISTOR, NPN, 65V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:110hFE; Transistor Case Style:SOT-23; No.
TRIAC, 12A, 600V, TO-220AB; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current IT(rms):12A; Triac Case Style:TO-220AB; Gate Trigger Current Max (QI), Igt:50mA; Gate Trigger Voltage Max Vgt:1.
1A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:110hFE; Transistor Case Style:SOT-23; No.
Nexperia Bc849C,215 TRANSISTOR, NPN, 30V, 0.of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC849C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:420; No.1A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:520hFE; Transistor Case Style:SOT-23; No.
Nexperia Bav70W,115.DIODE, DUAL, SOT-323; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):175mA; Forward Voltage VF Max:1.
Stmicroelectronics Btb12-600Bwrg.TRIAC, 12A, 600V, TO-220AB; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current IT(rms):12A; Triac Case Style:TO-220AB; Gate Trigger Current Max (QI), Igt:50mA; Gate Trigger Voltage Max Vgt:1.5V; Peak Gate Power:1W; Peak Non Rep Surge Current Itsm 50Hz:120A; Holding Current Max Ih:50mA; No.
Nexperia Bat721A,215.DIODE, SCHOTTKY, DUAL; Diode Configuration:Dual Common Anode; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):200mA; Forward Voltage VF Max:550mV; Forward Surge Current Ifsm Max:1A; Operating Temperature Max:150°C; Diode Case Style:SOT-23; No.