TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-363; No.Nexperia Pumd3,115 of Pins:6Pins; No. of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:10kohm; Resistance R2:10kohm; Transistor Case Style:SOT-363; Transistor Polarity:NPN, PNP.
TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:-; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-363; No. of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:10kohm; Transistor Case Style:SOT-363; Transistor Polarity:NPN, PNP; Voltage Vcbo:50V.Nexperia Pumd4,115 of Pins:6Pins; No.
of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:10kohm; Resistance R2:10kohm; Transistor Case Style:SOT-363; Transistor Polarity:NPN, PNP.Nexperia Pumd3,115 of Pins:6Pins; No.
of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:10kohm; Transistor Case Style:SOT-363; Transistor Polarity:NPN, PNP; Voltage Vcbo:50V.
of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:10kohm; Resistance R1 PNP:10kohm; Resistance R2:47kohm; Transistor Case Style:SOT-363.
7kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-363; No.Nexperia Pumh13,115 of Pins:6Pins; No. of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Transistor Case Style:SOT-363; Transistor Polarity:NPN; Transistor Type:Bias Resistor (BRT); Transition Frequency ft:230MHz; Voltage Vcbo:50V.
7kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-363; No. TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4. of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Transistor Case Style:SOT-363; Transistor Polarity:NPN; Transistor Type:Bias Resistor (BRT); Transition Frequency ft:230MHz; Voltage Vcbo:50V.Nexperia Pumh13,115 of Pins:6Pins; No.
Nexperia Pumh2,115 of Pins:6Pins; No. TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-363; No. of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:47kohm; Resistance R1 PNP:47kohm; Resistance R2:47kohm; Transistor Case Style:SOT-363; Voltage Vcbo:50V.
of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:47kohm; Resistance R1 PNP:47kohm; Resistance R2:47kohm; Transistor Case Style:SOT-363; Voltage Vcbo:50V.Nexperia Pumh2,115 of Pins:6Pins; No. TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-363; No.
of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:2.
TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:-; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-363; No. of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:10kohm; Resistance R1 PNP:10kohm; Transistor Case Style:SOT-363; Transistor Polarity:NPN; Voltage Vcbo:50V.
Nexperia Pumh4,115 of Pins:6Pins; No. of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:10kohm; Resistance R1 PNP:10kohm; Transistor Case Style:SOT-363; Transistor Polarity:NPN; Voltage Vcbo:50V.
TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-363; No. of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:10kohm; Resistance R1 PNP:10kohm; Resistance R2:47kohm; Transistor Case Style:SOT-363; Voltage Vcbo:50V.Nexperia Pumh9,115 of Pins:6Pins; No.
Nexperia Pumz2,115.TRANSISTOR, NPN, SOT-363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:180mW; DC Collector Current:150mA; DC Current Gain hFE:250hFE; Transistor Case Style:SOT-363; No.
Nexperia Pzta42,115.2W; DC Collector Current:100mA; DC Current Gain hFE:40hFE; Transistor Case Style:SOT-223; No.TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:-; Power Dissipation Pd:1.