Nexperia Pmmt491A,215.TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:1A; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-23; No.
Nexperia Pmmt591A,215.TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:1A; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-23; No.
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:1A; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-23; No.
TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:1A; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-23; No. Nexperia Pmmt591A,215.
TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:2.
of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:10kohm; Resistance R2:10kohm; Transistor Case Style:SOT-363; Transistor Polarity:PNP. TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-363; No.Nexperia Pumb11,115 of Pins:6Pins; No.
. Nexperia Pumb4,115 TRANSISTOR, DIGITAL, DUAL, SOT-363; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:200mW; DC Collector Current:-100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No.of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):-150mV; Continuous Collector Current Ic Max:100A; Current Ic Continuous a Max:100A; Current Ic hFE:1mA; Full Power Rating Temperature:25°C; Hfe Min:200; Module Configuration:Dual; No.
Nexperia Pumd10,115 of Pins:6Pins; No. TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.
of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:47kohm; Resistance R2:47kohm; Transistor Case Style:SOT-363; Transistor Polarity:PNP. TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-363; No.Nexperia Pumb2,115 of Pins:6Pins; No.
of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):-150mV; Continuous Collector Current Ic Max:100A; Current Ic Continuous a Max:100A; Current Ic hFE:1mA; Full Power Rating Temperature:25°C; Hfe Min:200; Module Configuration:Dual; No..
2kohm; Resistance R2:47kohm; Transistor Case Style:SOT-363; Voltage Vcbo:50V. of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:2.
of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:47kohm; Resistance R2:47kohm; Transistor Case Style:SOT-363; Voltage Vcbo:50V. TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-363; No.Nexperia Pumd12,115 of Pins:6Pins; No.
Nexperia Pumd16,115 of Pins:6Pins; No. of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:22kohm; Resistance R2:47kohm; Transistor Case Style:SOT-363; Transistor Polarity:NPN, PNP.
of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:22kohm; Resistance R2:22kohm; Transistor Case Style:SOT-363; Transistor Polarity:NPN, PNP.Nexperia Pumd2,115 of Pins:6Pins; No. TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-363; No.
of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:47kohm; Resistance R2:47kohm; Transistor Case Style:SOT-363; Voltage Vcbo:50V.
7kohm; Base-Emitter Resistor R2:4.7kohm; Transistor Case Style:SOT-363; Voltage Vcbo:50V. TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.
Nexperia Pumd17,115 TRANSISTOR, DIGITAL, DUAL, SOT-363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:60hFE; Transistor Case Style:SOT-363; No..of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):150mV; Continuous Collector Current Ic Max:100A; Current Ic Continuous a Max:100A; Current Ic hFE:5mA; Full Power Rating Temperature:25°C; Hfe Min:60; Module Configuration:Complementary; No.
of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:22kohm; Resistance R2:22kohm; Transistor Case Style:SOT-363; Transistor Polarity:NPN, PNP.