Infineon Bsc123N08Ns3Gatma1.0103ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.MOSFET, N CH, 55A, 80V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.8V; Power Dissipation Pd:66W; Transistor Case Style:PG-TDSON; No.
85V; Power Dissipation Pd:114W; Transistor Case Style:PG-TDSON; No.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.MOSFET, N CH, 71A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0. Infineon Bsc123N10Lsgatma1.
MOSFET, N CH, 20A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0. Infineon Bsc150N03Ldgatma1.0125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:26W; Transistor Case Style:PG-TDSON; No.
0122; Available until stocks are exhausted Alternative available.MOSFET, N CH, 63A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.
0167ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:78W; Transistor Case Style:PG-TDSON; No.MOSFET, N CH, 100V, 45A, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.
MOSFET, N CH, 100A, 40V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.
MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.
8V; Power Dissipation Pd:66W; Transistor Case Style:PG-TSDSON; No.MOSFET, N CH, 40A, 80V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.
MOSFET, N CH, 40A, 80V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0103ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.
MOSFET, N CH, 35A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:25W; Transistor Case Style:PG-TSDSON; No. Infineon Bsz130N03Msgatma1.
MOSFET, N CH, 180A, 60V, PG-TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V;.
MOSFET, N CH, 120A, 80V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.
0025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:214W; Transistor Case Style:TO-263; No.MOSFET, N CH, 160A, 80V, PG-TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0. Infineon Ipb030N08N3Gatma1.
0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No.MOSFET, N CH, 100A, 150V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0. Infineon Ipb072N15N3Gatma1.
0067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.MOSFET, N CH, 50A, 60V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0. Infineon Ipb081N06L3Gatma1.
MOSFET, N CH, 50A, 60V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:71W; Transistor Case Style:TO-263; No. Infineon Ipb090N06N3Gatma1.
016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:150W; Transistor Case Style:TO-263; No. Infineon Ipb200N15N3Gatma1.MOSFET, N CH, 50A, 150V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.
MOSFET, N CH, 90A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0. Infineon Ipd031N03Lgatma1.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:94W; Transistor Case Style:TO-252; No.
MOSFET, N CH, 50A, 150V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0. Infineon Ipd200N15N3Gatma1.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:150W; Transistor Case Style:TO-252; No.
Infineon Ipd200N15N3Gatma1.MOSFET, N CH, 50A, 150V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:150W; Transistor Case Style:TO-252; No.