MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.
Infineon Bsc025N03Msgatma1.MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:83W; Transistor Case Style:PG-TDSON; No.
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:69W; Transistor Case Style:PG-TDSON; No. Infineon Bsc030N03Lsgatma1.
MOSFET, N CH, 100A, 40V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:83W; Transistor Case Style:PG-TDSON; No.
0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.MOSFET, N CH, 100A, 80V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0. Infineon Bsc047N08Ns3Gatma1.
0049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1. Infineon Bsc059N04Lsgatma1.2V; Power Dissipation Pd:50W; Transistor Case Style:PG-TDSON; No.MOSFET, N CH, 73A, 40V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:73A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.
Infineon Bsc090N03Lsgatma1.MOSFET, N CH, 48A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:32W; Transistor Case Style:PG-TDSON; No.
2V;.0078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.MOSFET, N CH, 49A, 40V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.
MOSFET, N CH, 39A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:28W; Transistor Case Style:PG-TDSON; No. Infineon Bsc120N03Msgatma1.