032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:19W; Transistor Case Style:PowerPAK SC70; No.MOSFET, N-CH, 80V, 12A, 150DEG C, 19W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0. Vishay Sia108Dj-T1-Ge3.
Vishay Siha22N60Ef-Ge3.MOSFET, N-CH, 600V, 19A, 150DEG C, 33W; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.158ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:33W; Transistor Case Style:TO-220FP; No.
Vishay Siss42Ldn-T1-Ge3.MOSFET, N-CH, 100V, 39A, 150DEG C, 57W; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0122ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.
0034ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2A, 150DEG C, 57W; Transistor Polarity:N Channel; Continuous Drain Current Id:81.5V; Power Dissipation Pd:57W; Transistor Case Style:PowerPAK 1212; No.
0122ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:57W; Transistor Case Style:PowerPAK 1212; No.MOSFET, N-CH, 100V, 39A, 150DEG C, 57W; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.
00283ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.MOSFET, P-CH, -40V, -120A, 157W; Transistor Polarity:P Channel; Continuous Drain Current Id:-120A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0. Vishay Sqm40041El_Ge3.
0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs.MOSFET, N-CH, 60V, 100A, 175DEG C, 150W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.
MOSFET, N-CH, 60V, 100A, 175DEG C, 150W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs.
Vishay Sq1922Aeeh-T1_Ge3.85A; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:850mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.21ohm; Rds(on) Test Voltage Vgs:4.
0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:107W; Transistor Case Style:TO-252; No.MOSFET, N-CH, 60V, 100A, 175DEG C, 107W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.