8V; Power Dissipation Pd:57W; Transistor Case Style:PowerPAK 1212; No. Vishay Siss30Dn-T1-Ge3.00685ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.MOSFET, N-CH, 80V, 54.
7W; Transistor Case Style:PowerPAK 1212; No.0106ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.MOSFET, N-CH, 100V, 45.
MOSFET, DUAL N-CH, 30V, 141A, 150DEG C; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:141A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2. Vishay Sizf300Dt-T1-Ge3.
MOSFET, N-CH, 120A, 30V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:375W; Transistor Case Style:TO-263; No. Vishay Sqm30010El_Ge3.
0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:375W; Transistor Case Style:TO-263; No. Vishay Sqm30010El_Ge3.MOSFET, N-CH, 120A, 30V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.
MOSFET, AEC-Q101, P-CH, -40V, -50A, 107W; Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.
5W; Transistor Case Style:PowerPAK 1212; No.5W; Transistor Polarity:P Channel; Continuous Drain Current Id:-16A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power Dissipation Pd:62. Vishay Sqs415Enw-T1_Ge3.
MOSFET, 40V, 150A, 175DEG C, 150W; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.5V; Power Dissipation Pd:150W; Transistor Case Style:TO-263; No. Vishay Sum40012El-Ge3.00139ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.
MOSFET, 100V, 150A, 175DEG C; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:375W; Transistor Case Style:TO-263; No.
021ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power Dissipation Pd:53. Vishay Sqs411Enw-T1_Ge3.6W; Transistor Polarity:P Channel; Continuous Drain Current Id:-16A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.
5V; Power Dissipation Pd:150W; Transistor Case Style:TO-263; No.MOSFET, 40V, 150A, 175DEG C, 150W; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00139ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2. Vishay Sum40012El-Ge3.
Vishay Sum70030E-Ge3.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:375W; Transistor Case Style:TO-263; No.MOSFET, 100V, 150A, 175DEG C; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.
MOSFET, 100V, 150A, 175DEG C, 375W; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.00265ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:375W; Transistor Case Style:TO-220AB; No. Vishay Sup70030E-Ge3.