Infineon Ipl60R105P7Auma1.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:137W; Transistor Case Style:VSON; No.MOSFET, N-CH, 600V, 33A, VSON; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.
MOSFET, N-CH, 600V, 37A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5V; Power Dissipation Pd:129W; Transistor Case Style:TO-263; No.069ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.
Infineon Ipb60R099P7Atma1.MOSFET, N-CH, 600V, 31A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.
MOSFET, N-CH, 600V, 31A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3. Infineon Ipb60R099P7Atma1.5V; Power Dissipation Pd:117W; Transistor Case Style:TO-263; No.
1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3. Infineon Ipb60R120P7Atma1.MOSFET, N-CH, 600V, 26A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5V; Power Dissipation Pd:95W; Transistor Case Style:TO-263; No.
Infineon Ipl60R105P7Auma1.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:137W; Transistor Case Style:VSON; No.MOSFET, N-CH, 600V, 33A, VSON; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.
5V; Power Dissipation Pd:53W; Transistor Case Style:TO-263; No.214ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.MOSFET, N-CH, 600V, 12A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0. Infineon Ipb60R280P7Atma1.