5A, TO-92-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:125MHz; Power Dissipation Pd:625mW; DC Collector Current:500mA; DC Current Gain hFE:10000hFE; Transistor Case Style:TO-92; No.TRANSISTOR, NPN, 30V, 0. Onsemi Ksp13Ta.
Onsemi Ksp42Bu.5A, TO-92-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:625mW; DC Collector Current:500mA; DC Current Gain hFE:40hFE; Transistor Case Style:TO-92; No.TRANSISTOR, NPN, 300V, 0.
8A, SUPERSOT-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:125MHz; Power Dissipation Pd:350mW; DC Collector Current:800mA; DC Current Gain hFE:10000hFE; Transistor Case Style:SuperSOT; No.
TRANSISTOR, PNP, -60V, -2A, TO-92-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:75MHz; Power Dissipation Pd:625mW; DC Collector Current:-2A; DC Current Gain hFE:40hFE; Transistor Case Style:TO-92; No. Onsemi Mps751.
TRANSISTOR, AEC-Q101, NPN, 100V, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:100MHz; Power Dissipation Pd:800mW; DC Collector Current:2A; DC Current Gain hFE:40hFE; Transistor Case Style:SOT-223; No.
TRANSISTOR, NPN, 60V, 4A, SOT-223-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:75MHz; Power Dissipation Pd:1.2W; ; Available until stocks are exhausted Alternative available.
Onsemi Nsv1C201Mz4T1G.TRANSISTOR, AEC-Q101, NPN, 100V, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:100MHz; Power Dissipation Pd:800mW; DC Collector Current:2A; DC Current Gain hFE:40hFE; Transistor Case Style:SOT-223; No.
TRANSISTOR, NPN, 90V, 3A, SOT-223-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:90V; Transition Frequency ft:75MHz; Power Dissipation Pd:1W; DC Collector Current:3A; DC Current Gain hFE:25hFE; Transistor Case Style:SOT-223; No.
2A; DC Current Gain hFE:10000hFE; Transistor Case Style:SOT-223; No.TRANSISTOR, NPN, 30V, 1.2A, SOT-223-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:125MHz; Power Dissipation Pd:1W; DC Collector Current:1. Onsemi Pzta14.
Onsemi Nzt902.TRANSISTOR, NPN, 90V, 3A, SOT-223-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:90V; Transition Frequency ft:75MHz; Power Dissipation Pd:1W; DC Collector Current:3A; DC Current Gain hFE:25hFE; Transistor Case Style:SOT-223; No.
2A, SOT-223-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:125MHz; Power Dissipation Pd:1W; DC Collector Current:1.2A; DC Current Gain hFE:10000hFE; Transistor Case Style:SOT-223; No. Onsemi Pzta14.TRANSISTOR, NPN, 30V, 1.
00925ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:234W; Transistor Case Style:TO-263; No.MOSFET, N-CH, 150V, 92A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:92A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0. Onsemi Fdb110N15A.
7V; Power Dissipation Pd:250W; Transistor Case Style:MO-299A; No. Onsemi Fdbl0260N100.MOSFET, N-CH, 100V, 200A, MO-299A-8; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.
Onsemi Fdd390N15A.0335ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:63W; Transistor Case Style:TO-252; No.MOSFET, N-CH, 150V, 26A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.
MOSFET, N-CH, 150V, 26A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0335ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:63W; Transistor Case Style:TO-252; No. Onsemi Fdd390N15A.
0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.MOSFET, N-CH, 100V, 200A, MO-299A-8; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.
0048ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:429W; Transistor Case Style:TO-247; No.MOSFET, N-CH, 150V, 156A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:156A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0. Onsemi Fdh055N15A.
5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:4.5A, MICROFET-6; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5V; Threshold Voltage Vgs:700mV; Power Dissipation Pd:2.
MOSFET, P-CH, -150V, -1A, MICROFET-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-1A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3.2V; Power Dissipation Pd:2.4W; Transistor Case Style:MicroFET; No.
MOSFET, N-CH, 150V, 18A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0. Onsemi Fdd770N15A.061ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:56.
MOSFET, N-CH, 60V, 7.8V; Power Dissipation Pd:2.5A, MICROFET-6; Transistor Polarity:N Channel; Continuous Drain Current Id:7.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.
MOSFET, P-CH, -12V, -80A, POWER 33-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-80A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.5V; Threshold Voltage Vgs:-700mV; Power Dissipation Pd:48W; Transistor Case Style:Power 33; No.0028ohm; Rds(on) Test Voltage Vgs:-4.
MOSFET, N-CH, 30V, 75A, POWER 33-8; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:30V; On Resistance Rds(on):900µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:54W; Transistor Case Style:Power 33; No. Onsemi Fdmc8010.