5mm Plug Single IR Emitter; Data Rate Max:-; Supply Voltage Min:-; Supply Voltage Max:-; Supply Current:-; Data Transmission Distance:-; Peak Wavelength:-; Operating Temperature Min:-; Operating Tem 93T9091.3.
Surface Mount IR Receiver Target; Data Rate Max:-; Supply Voltage Min:-; Supply Voltage Max:12VDC; Supply Current:30mA; Data Transmission Distance:-; Peak Wavelength:-; Operating Temperature Min:-; Operating Temperature Max:-.
IR Over Coax Coupler, With Power Supply; Data Rate Max:-; Supply Voltage Min:8VDC; Supply Voltage Max:12VDC; Supply Current:30mA; Data Transmission Distance:-; Peak Wavelength:-; Operating Temperature Min:-; Product Range:-.
1V; Reverse Recovery Time trr Max:-; Forward Surge Current Ifsm Max:30A; Operating Temperature Max:175°C; Diode Case Style:DO-204AL; No.RECTIFIER, SINGLE, 50V, 1A, DO-204AL; Repetitive Reverse Voltage Vrrm Max:50V; Forward Current If(AV):1A; Diode Configuration:Single; Forward Voltage VF Max:1. Onsemi 1N4001Rlg.
Onsemi 2N3904Tfr.2A, TO-92-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:625mW; DC Collector Current:200mA; DC Current Gain hFE:30hFE; Transistor Case Style:TO-92; No.
6A, TO-92-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:250MHz; Power Dissipation Pd:625mW; DC Collector Current:600mA; DC Current Gain hFE:40hFE; Transistor Case Style:TO-92; No. Onsemi 2N4401Tfr.TRANSISTOR, NPN, 40V, 0.
6A, TO-92-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:300MHz; Power Dissipation Pd:625mW; DC Collector Current:600mA; DC Current Gain hFE:30hFE; Transistor Case Style:TO-92; No. Onsemi 2N5551Bu.
Onsemi Bat43Xv2.DIODE, SCHOTTKY, SINGLE, 30V, SOD-523F; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):200mA; Forward Voltage VF Max:1V; Forward Surge Current Ifsm Max:4A; Operating Temperature Max:125°C; Diode Case Style:SOD-523F; No.
Onsemi Fdd18N20Lz.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.MOSFET, N-CH, 200V, 16A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.
032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8A, MICROFET-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.6W; Transistor Case Style:MicroFET; No.
4W; Transistor Case Style:MicroFET; No.MOSFET, P-CH, -12V, -12A, MICROFET-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.5V; Threshold Voltage Vgs:-600mV; Power Dissipation Pd:2.