Rohm 2Sc4102Frat106.TRANSISTOR, AEC-Q101, NPN, 120V, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:120V; Transition Frequency ft:140MHz; Power Dissipation Pd:200mW; DC Collector Current:50mA; DC Current Gain hFE:180hFE; Transistor Case Style:SOT-323; No.
Rohm 2Sc5876Frat106.TRANSISTOR, AEC-Q101, NPN, 60V, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:300MHz; Power Dissipation Pd:200mW; DC Collector Current:500mA; DC Current Gain hFE:120hFE; Transistor Case Style:SOT-323; No.
Rohm 2Sc4081Frat106.TRANSISTOR, AEC-Q101, NPN, 50V, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:180MHz; Power Dissipation Pd:200mW; DC Collector Current:150mA; DC Current Gain hFE:180hFE; Transistor Case Style:SOT-323; No.
TRANSISTOR, AEC-Q101, NPN, 50V, SOT-416; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:180MHz; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:120hFE; Transistor Case Style:SOT-416; No. Rohm 2Sc4617Fratl.
Rohm 2Sc5658Fhat2L.TRANSISTOR, AEC-Q101, NPN, 50V, SOT-723; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:180MHz; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:120hFE; Transistor Case Style:SOT-723; No.
5V; Power Dissipation Pd:1W; Transistor Case Style:TUMT; No.055ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.MOSFET, AEC-Q101, P-CH, -30V, TUMT; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.
MOSFET, AEC-Q101, P-CH, -30V, TUMT; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.5V; Power Dissipation Pd:1W; Transistor Case Style:TUMT; No.036ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2. Rohm Rrl035P03Fratr.
5V; Power Dissipation Pd:1W; Transistor Case Style:TSMT; No.032ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2. Rohm Rrr040P03Fratl.MOSFET, AEC-Q101, P-CH, -30V, TSMT; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.
MOSFET, AEC-Q101, N-CH, 40V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0095ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:50W; Transistor Case Style:TO-263; No. Rohm Rsj451N04Fratl.
5V; Power Dissipation Pd:1.MOSFET, AEC-Q101, N-CH, 60V, TSMT; Transistor Polarity:N Channel; Continuous Drain Current Id:1.21ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.
24ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2. Rohm Qs8M51Fratr.MOSFET, AEC-Q101, N&P, 100V, 2A, TSMT; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.