05ohm; Rds(on) Tes; Available until stocks are exhausted.MOSFET, AEC-Q101, DUAL N&PCH, 30V, SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.
0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:115W; Transistor Case Style:TO-263; No.MOSFET, AEC-Q101, N-CH, 40V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.
MOSFET, AEC-Q101, N-CH, 40V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:86A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:65W; Transistor Case Style:TO-252; No. Infineon Ipd90N04S405Atma1.
00188ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:158W; Transistor Case Style:TO-263; No.MOSFET, AEC-Q101, N-CH, 40V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0. Infineon Ipb120N04S402Atma1.
of Pins:14Pins; Thermal Protection:Yes; On / Enable Input Polarity:Active High, Active Low; No. Infineon Bts52004Ekaxuma1 POWER LOAD SW, AEC-Q100, 13.3A; On State Resistance:0.
Infineon Igw30N65L5Xksa1.05V; Power Dissipation Pd:227W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No.IGBT, SINGLE, 650V, 85A, TO-247; DC Collector Current:85A; Collector Emitter Saturation Voltage Vce(on):1.
MOSFET, AEC-Q101, N-CH, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0131ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1..
005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:58W; Transistor Case Style:TO-252; No.MOSFET, AEC-Q101, N-CH, 40V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0. Infineon Ipd75N04S406Atma1.
0047ohm; Rds(on) Test Volt; Available until stocks are exhausted.MOSFET, N CH, 135V, 160A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:135V; On Resistance Rds(on):0.
56ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:33W; Transistor Case Style:TO-220FP; No. Infineon Ipa80R650Cexksa2.MOSFET, N-CH, 800V, 8A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.
65V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No.IGBT, SINGLE, 650V, 42A, TO-220; DC Collector Current:42A; Collector Emitter Saturation Voltage Vce(on):1. Infineon Ikp20N65H5Xksa1.
0078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:33W; Transistor Case Style:TO-220FP; No. Infineon Ipa093N06N3Gxksa1.MOSFET, N-CH, 60V, 43A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.