5A, TUMT-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.MOSFET, P-CH, -12V, -3.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:1W; Transistor Case Style:TUMT; No.5A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.
MOSFET, N-CH, 200V, 5A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.25V; Power Dissipation Pd:29W; Transistor Case Style:TO-252; No.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.
MOSFET, P-CH, -12V, -4A, TUMT-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:800mW; Transistor Case Style:TUMT; No. Rohm Raf040P01Tcl.022ohm; Rds(on) Test Voltage Vgs:-4.
5V; Threshold Voltage Vgs:800mV; Power Dissipation Pd:150mW; Transistor Case Style:SC-89; No.2A, SC-89-3; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):1.
MOSFET, P-CH, -30V, -0.25A, SC-89-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-250mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.9ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.
6ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power Dissipation Pd:150mW; Transistor Case Style:SC-89; No.MOSFET, N-CH, 50V, 0.2A, SC-89-3; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):1.
MOSFET, P-CH, -30V, -5A, TSMT-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.5W; Transistor Case Style:TSMT; No.022ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.
5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:150mW; Transistor Case Style:SC-89; No.1A, SC-89; Transistor Polarity:P Channel; Continuous Drain Current Id:-100mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):2.5ohm; Rds(on) Test Voltage Vgs:-4. Rohm Re1C001Zptl.
0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.MOSFET, N-CH, 30V, 39A, HSMT-8; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0. Rohm Rq3E150Gntb.
5V; Power Dissipation Pd:17W; Transistor Case Style:HSMT; No.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.MOSFET, N-CH, 30V, 39A, HSMT-8; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0. Rohm Rq3E150Gntb.
5V; Power Dissipation Pd:1W; Transistor Case Style:TSMT; No.055ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.MOSFET, P-CH, -30V, -3A, TSMT; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.
MOSFET, P-CH, -30V, -3A, TSMT; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.
MOSFET, P-CH, -30V, -4A, TSMT; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:1W; Transistor Case Style:TSMT; No. Rohm Rrr040P03Tl.