0035ohm; Rds(on) Test Voltage Vgs:-4. Vishay Siss23Dn-T1-Ge3.5V; Threshold Voltage Vgs:900mV; Power Dissipation Pd:57W; Transistor Case Style:PowerPAK 1212; No.MOSFET, P-CH, -20V, -50A, POWERPAK 1212; Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.
Vishay Sud08P06-155L-Ge3.2A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.125ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power Dissipation Pd:20.MOSFET, P-CH, 20V, -8.
0035ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:900mV; Power Dissipation Pd:57W; Transistor Case Style:PowerPAK 1212; No.MOSFET, P-CH, -20V, -50A, POWERPAK 1212; Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0. Vishay Siss23Dn-T1-Ge3.
MOSFET, P-CH, -80V, -50A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:136W; Transistor Case Style:TO-252; No. Vishay Sud50P08-25L-E3.
Vishay Sum110P06-08L-E3.MOSFET, P-CH, -60V, -110A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-110A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:272W; Transistor Case Style:TO-263; No.
Vishay Sud50P08-25L-E3.021ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:136W; Transistor Case Style:TO-252; No.MOSFET, P-CH, -80V, -50A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.
MOSFET, P-CH, -60V, -110A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-110A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0. Vishay Sum110P06-08L-E3.0065ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:272W; Transistor Case Style:TO-263; No.
MOSFET, N-CH, 200V, 57A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-220AB; No.
5V; Signal Range Max:-; Data Rate:1Mbps; Bluetooth Class:-; Receive Sensitivity:-87dBm; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:-; SVHC:No SVHC (17-Dec-2015).4.
Vishay Vs-50Wq03Fntr-M3.SCHOTTKY RECT, SINGLE, 30V, TO-252AA; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):5.5A; Diode Configuration:Single; Diode Case Style:TO-252AA; No.
5A; Diode Configuration:Single; Diode Case Style:TO-252AA; No.SCHOTTKY RECT, SINGLE, 40V, TO-252AA; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):5.