25A, 300V, SOT143; Repetitive Reverse Voltage Vrrm Max:300V; Forward Current If(AV):250mA; Diode Configuration:Dual Isolated; Forward Voltage VF Max:1.5A; Operating Temperature Max:150°C; Diode Case Style:SOT-143B; No.
25V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:4A; Operating Temperature Max:150°C; Diode Case Style:SOT-363; No. Nexperia Baw56S,115.
265A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:265mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:310mW; Transistor Case Style:SOT-23; No.
25V; Reverse Recovery Time trr Max:50ns; Forward Surge Current Ifsm Max:16A; Operating Temperature Max:150°C; Diode Case Style:SOT-457; No. Nexperia Bas21Avd,165.
1V; Power Dissipation Pd:280mW; Transistor Case Style:SOT-363; No.MOSFET, AUTO, DUAL N-CH, 60V, SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:320mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1. Nexperia Bss138Bks,115.
6V; Power Dissipation Pd:330mW; Transistor Case Style:SOT-666; No. Nexperia Nx1029X,115.MOSFET, AUTO, N AND P-CH, 60V, SOT666; Transistor Polarity:N and P Channel; Continuous Drain Current Id:330mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.
2A, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.5V; Threshold Voltage Vgs:-700mV; Power Dissipation Pd:335mW; Transistor Case Style:SOT-23; No. Nexperia Pmv160Up,215.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.
1V; Power Dissipation Pd:280mW; Transistor Case Style:SOT-363; No. Nexperia Bss138Bks,115.MOSFET, AUTO, DUAL N-CH, 60V, SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:320mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.