26A, DFN1010B; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:260mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.6V; Power Dissipation Pd:285mW; Transistor Case Style:DFN1010B; No.MOSFET, DUAL N-CH, 60V, 0.
5ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.23A, SOT883B-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-230mA; Drain Source Voltage Vds:-50V; On Resistance Rds(on):4.
Nexperia Nx3008Nbkmb,315.53A, SOT883B-3; Transistor Polarity:N Channel; Continuous Drain Current Id:530mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:4.MOSFET, N-CH, 30V, 0.5V; Threshold Voltage Vgs:900mV; Power Dissipation Pd:360mW; Transistor Case Style:SOT-883B; No.
5ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.23A, SOT883B-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-230mA; Drain Source Voltage Vds:-50V; On Resistance Rds(on):4.
2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.35A, SOT883-3; Transistor Polarity:N Channel; Continuous Drain Current Id:350mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.
5V; Threshold Voltage Vgs:650mV; Power Dissipation Pd:510mW; Transistor Case Style:TO-236AB; No. Nexperia Pmv20Xner.019ohm; Rds(on) Test Voltage Vgs:4.MOSFET, N-CH, 30V, 5.
8A, TO236AB; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.MOSFET, P-CH, -20V, -2.067ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:480mW; Transistor Case Style:TO-236AB; No.
MOSFET, N-CH, 60V, 0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1. Nexperia Nx7002Bkmbyl.35A, SOT883B-3; Transistor Polarity:N Channel; Continuous Drain Current Id:350mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.
345ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:400mW; Transistor Case Style:DFN1010D; No. Nexperia Pmxb360Eneaz.
5V; Threshold Voltage Vgs:650mV; Power Dissipation Pd:510mW; Transistor Case Style:TO-236AB; No.016ohm; Rds(on) Test Voltage Vgs:4.MOSFET, N-CH, 20V, 6.
7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:4. Nexperia Pmv20Xner.5V; Threshold Voltage Vgs:650mV; Power Dissipation Pd:510mW; Transistor Case Style:TO-236AB; No.
6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.5V; Threshold Voltage Vgs:-650mV; Power Dissipation Pd:490mW; Transistor Case Style:TO-236AB; No.048ohm; Rds(on) Test Voltage Vgs:-4.MOSFET, P-CH, -20V, -3.