.of Pins:3 Pin; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); No.7V; Transistor Case Style:SOT-23; Transistor Type:Switching; No. Onsemi Mmbf5103 JFET, N CHANNEL, -40V, SOT-23-3; Breakdown Voltage Vbr:40V; Zero Gate Voltage Drain Current Idss Min:10mA; Zero Gate Voltage Drain Current Idss Max:40mA; Gate-Source Cutoff Voltage Vgs(off) Max:-2.
Onsemi Mmbt5179.TRANSISTOR, RF, NPN, 12V, 2GHZ, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:2GHz; Power Dissipation Pd:225mW; DC Collector Current:50mA; DC Current Gain hFE:25hFE; RF Transistor Case:SOT-23; No.
TRANSISTOR, RF, NPN, 12V, 2GHZ, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:2GHz; Power Dissipation Pd:225mW; DC Collector Current:50mA; DC Current Gain hFE:25hFE; RF Transistor Case:SOT-23; No. Onsemi Mmbt5179.
Onsemi Mmpq3904.TRANS, BIPOL, NPN, QUAD, 40V, SOIC-16; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:1W; DC Collector Current:200mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOIC; No.
TRANS, BIPOL, PNP, QUAD, -40V, SOIC-16; Transistor Polarity:Quad PNP; Collector Emitter Voltage V(br)ceo:-40V; Power Dissipation Pd:1W; DC Collector Current:-200mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOIC;.
Onsemi Mmpq3904.TRANS, BIPOL, NPN, QUAD, 40V, SOIC-16; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:1W; DC Collector Current:200mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOIC; No.
TRANS, BIPOL, PNP, QUAD, -40V, SOIC-16; Transistor Polarity:Quad PNP; Collector Emitter Voltage V(br)ceo:-40V; Power Dissipation Pd:1W; DC Collector Current:-200mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOIC;.
DIODE, SMALL SIGNAL, 100V, SOD-123; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):200mA; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:2A; Operating Temperature Max:150°C; Diode Case Style:SOD-123; No. Onsemi Mmsd4448.
DIODE, SMALL SIGNAL, 100V, SOD-123; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):200mA; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:2A; Operating Temperature Max:150°C; Diode Case Style:SOD-123; No. Onsemi Mmsd4448.
TRANSISTOR, BIPOL, NPN, 80V, TO-226AA-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation Pd:625mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case Style:TO-226AA; No. Onsemi Mpsa06Ra.
34A, SOT-23-6; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-340mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):1.9V; Power Dissipation Pd:960mW; Transistor Case Style:SOT-23; No.MOSFET, 2 P-CH, -60V, -0. Onsemi Ndc7003P.
Onsemi Nzt560A.TRANSISTOR, BIPOL, NPN, 60V, SOT-223-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:75MHz; Power Dissipation Pd:1W; DC Collector Current:3A; DC Current Gain hFE:25hFE; Transistor Case Style:SOT-223; No.
9V; Power Dissipation Pd:960mW; Transistor Case Style:SOT-23; No.34A, SOT-23-6; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-340mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1. Onsemi Ndc7003P.
TRANSISTOR, BIPOL, NPN, 60V, SOT-223-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:75MHz; Power Dissipation Pd:1W; DC Collector Current:3A; DC Current Gain hFE:25hFE; Transistor Case Style:SOT-223; No. Onsemi Nzt560A.
TRANSISTOR, BIPOL, NPN, 40V, TO-226AA-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:625mW; DC Collector Current:1A; DC Current Gain hFE:35hFE; Transistor Case Style:TO-226AA; No. Onsemi Pn2222Abu.
TRANSISTOR, BIPOL, NPN, 40V, TO-226AA-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:625mW; DC Collector Current:1A; DC Current Gain hFE:35hFE; Transistor Case Style:TO-226AA; No. Onsemi Pn2222Atfr.
TRANSISTOR, BIPOL, PNP, -60V, TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power Dissipation Pd:625mW; DC Collector Current:-800mA; DC Current Gain hFE:50hFE; Transistor Case Style:TO-92; No.
TRANSISTOR, BIPOL, PNP, -60V, TO-226AA-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power Dissipation Pd:625mW; DC Collector Current:-800mA; DC Current Gain hFE:50hFE; Transistor Case Style:TO-226AA; No.
Onsemi Pn2907Atfr.TRANSISTOR, BIPOL, PNP, -60V, TO-226AA-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power Dissipation Pd:625mW; DC Collector Current:-800mA; DC Current Gain hFE:50hFE; Transistor Case Style:TO-226AA; No.
TRANSISTOR, BIPOL, NPN, 80V, SOT-223-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-223; No. Onsemi Pzta06.
Onsemi Pzta06.TRANSISTOR, BIPOL, NPN, 80V, SOT-223-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-223; No.
TRANSISTOR, BIPOL, PNP, -80V, SOT-223-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:50MHz; Power Dissipation Pd:1W; DC Collector Current:-500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-223; No.
047ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Power Dissipation Pd:60W; Transistor Case Style:TO-252AA; No.MOSFET, N-CH, 50V, 16A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:50V; On Resistance Rds(on):0.
Onsemi Rfd3055Lesm9A.107ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:3V; Power Dissipation Pd:38W; Transistor Case Style:TO-252AA; No.MOSFET, N-CH, 60V, 11A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.