1W; Transistor Case Style:SOT-223; No.2OHM, 2.MOSFET, N CH, 60V, 0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:3.
4A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:2. Vishay Irfr420Trpbf.4A; Drain Source Voltage Vds:500V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:42W; Transistor Case Style:TO-252AA; No.
8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:42W; Transistor Case Style:TO-252; No.1A; Drain Source Voltage Vds:400V; On Resistance Rds(on):1.8OHM, 3.1A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:3.
6A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):1.MOSFET, P CH, -200V, -3.5ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:42W; Transistor Case Style:TO-252AA; No. Vishay Irfr9220Trpbf.
Vishay Irll014Trpbf.2OHM, 2.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Power Dissipation Pd:3.
Vishay Si1012R-T1-Ge3.5V; Threshold Voltage Vgs:900mV; Power Dissipation Pd:150mW; Transistor Case Style:SOT-416; No.41ohm; Rds(on) Test Voltage Vgs:4.
5V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:250mW; Transistor Case Style:SC-89; No.19A, SC-89; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-190mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:-4. Vishay Si1025X-T1-Ge3.
8W; Transistor Case Style:SOT-363; No.5V; Threshold Voltage Vgs:400mV; Power Dissipation Pd:2.MOSFET, P CH, -12V, -4A, SOT-363; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0. Vishay Si1401Edh-T1-Ge3.
5V; Threshold Voltage Vgs:-400mV; Power Dissipation Pd:2.MOSFET, P CH, -20V, -6A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage Vgs:-4.
0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.0026OHM, 30A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.
8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.25W; Transistor Case Style:SOIC; No.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:3.