0092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:136W; Transistor Case Style:TO-252; No. Infineon Ipd110N12N3Gatma1.MOSFET, N-CH, 120V, 75A, TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:120V; On Resistance Rds(on):0.
9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0. Infineon Ipp60R099C6Xksa1.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:278W; Transistor Case Style:TO-220; No.MOSFET, N-CH, 600V, 37.
3A, TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:43.3A; Drain Source Voltage Vds:700V; On Resistance Rds(on):0.MOSFET, N-CH, 700V, 43.072oh; Available until stocks are exhausted Alternative available.
009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:50W; Transistor Case Style:TDSON; No.MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0. Infineon Bsc110N06Ns3Gatma1.
0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3. Infineon Ipp023Ne7N3Gxksa1.MOSFET, N-CH, 75V, 120A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.1V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No.
MOSFET, N-CH, 80V, 23A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0. Infineon Bsc340N08Ns3Gatma1.0275ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.
028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:136W; Transistor Case Style:TO-263; No. Infineon Ipb320N20N3Gatma1.MOSFET, N-CH, 200V, 34A, TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.
019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:71W; Transistor Case Style:TO-252; No.MOSFET, N-CH, 100V, 35A, TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.
Infineon Spb11N60C3Atma1.34ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:125W; Transistor Case Style:TO-263; No.MOSFET, N-CH, 650V, 11A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.
MOSFET, N-CH, 30V, 17A, 8DSO; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.56W; Transistor Case Style:P-DSO; No. Infineon Bso033N03Msgxuma1.0028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:1.
028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:136W; Transistor Case Style:TO-220; No. Infineon Ipp320N20N3Gxksa1.
MOSFET, N-CH, 560V, 16A, TO220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:560V; On Resistance Rds(on):0.25ohm; ; Available until stocks are exhausted Alternative available.