14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1W; Transistor Case Style:SOT-223; No.MOSFET, N CH 55V, 2A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0. Infineon Irll014Ntrpbf.
Vishay Si7489Dp-T1-Ge3.033ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:83W; Transistor Case Style:PowerPAK SO; No.
7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.1ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:5W; Transistor Case Style:SOIC; No.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.
MOSFET, N CH, 60V, 15A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.9W; Transistor Case Style:PowerPAK SO; No. Vishay Si7478Dp-T1-E3.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:1.
Vishay Si4435Ddy-T1-E3.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.4A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-11.0195ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:5W; Transistor Case Style:SOIC; No.
2A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.145ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:1.MOSFET, P CH, 200V, 2.
MOSFET, P CH, 150V, 3A, POWERPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):0.
Vishay Si7469Dp-T1-E3.021ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:83W; Transistor Case Style:PowerPAK SO; No.MOSFET, P CH, 80V, 28A, POWERPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-28A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.
Vishay Si7617Dn-T1-Ge3.MOSFET, P CH, 30V, 35A, POWERPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.5V; Power Dissipation Pd:52W; Transistor Case Style:PowerPAK 1212; No.0103ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.
1ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:5W; Transistor Case Style:SOIC; No.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.
MOSFET, N CH, 60V, 15A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.
MOSFET, NN CH, 20V, MICROFET 2X2; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0. Onsemi Fdma1024Nz.037ohm; Rds(on) Test Voltage Vgs:4.
048ohm; Rds(on) Test Voltage Vgs:-4.MOSFET, PP CH, 20V, 8SOIC; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.
MOSFET, N CH, 60V, 55A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.7V; Power Dissipation Pd:95W; Transistor Case Style:TO-220; No. Stmicroelectronics Stp55Nf06L.014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.
048ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:38.5W; Transistor Case Style:TO-252; No. Vishay Sud19P06-60-Ge3.
5V; Threshold Voltage Vgs:700mV; Power Dissipation Pd:700mW; Transistor Case Style:µFET; No.MOSFET, NN CH, 20V, MICROFET 2X2; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.
05oh; Available until stocks are exhausted Alternative available.9A, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.
MOSFET, NP CH, 60V, SC-89; Transistor Polarity:N and P Channel; Continuous Drain Current Id:305mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.5V; Power Dissipation Pd:250mW; Transistor Case Style:SC-89; No.