TRANSISTOR, NPN, 65V, 100MA, SOT363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:110hFE; Transistor Case Style:SOT-363; No. Nexperia Bc846S,115.
5V; Threshold Voltage Vgs:900mV; Power Dissipation Pd:280mW; Transistor Case Style:SOT-363; No.MOSFET, N/P CH, 30/30V, 350/200MA,SOT363; Transistor Polarity:N and P Channel; Continuous Drain Current Id:350mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:4. Nexperia Nx3008Cbks,115.
Nexperia Bc856Bs,115.TRANSISTOR, PNP/PNP, 65V, 100MA, SOT363; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-65V; Power Dissipation Pd:200mW; DC Collector Current:-100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No.
Nexperia Pmbt3904Ys,115.TRANSISTOR, NPN/NPN, 40V, 200MA, SOT363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:230mW; DC Collector Current:200mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-363; No.
TRANSISTOR, PNP/PNP, 65V, 100MA, SOT363; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-65V; Power Dissipation Pd:200mW; DC Collector Current:-100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No. Nexperia Bc856Bs,115.
Nexperia Nx3008Nbk,215.5V; Threshold Voltage Vgs:900mV; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No.MOSFET, N CH, 30V, 400MA, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:400mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:4.
Nexperia Nx3008Cbkv,115.MOSFET, N/P CH, 30/30V, 400/220MA,SOT666; Transistor Polarity:N and P Channel; Continuous Drain Current Id:400mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900mV; Power Dissipation Pd:330mW; Transistor Case Style:SOT-666; No.
MOSFET, N CH, 30V, 400MA, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:400mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900mV; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No. Nexperia Nx3008Nbk,215.
Nexperia Nx3008Nbks,115.5V; Threshold Voltage Vgs:900mV; Power Dissipation Pd:445mW; Transistor Case Style:SOT-363; No.MOSFET,NN CH, 30V, 350MA, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:350mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:4.
5V; Threshold Voltage Vgs:900mV; Power Dissipation Pd:330mW; Transistor Case Style:SOT-666; No.MOSFET,NN CH, 30V, 400MA, SOT666; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:400mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:4. Nexperia Nx3008Nbkv,115.
5V; Threshold Voltage Vgs:900mV; Power Dissipation Pd:260mW; Transistor Case Style:SOT-323; No.MOSFET, N CH, 30V, 350MA, SOT323; Transistor Polarity:N Channel; Continuous Drain Current Id:350mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:4. Nexperia Nx3008Nbkw,115.
MOSFET, P CH, -30V, -230MA, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-230mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-900mV; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No.
8ohm; Rds(on) Test Voltage Vgs:-4.MOSFET,PP CH, 30V, 200MA, SOT363; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.
5V; Threshold Voltage Vgs:-900mV; Power Dissipation Pd:330mW; Transistor Case Style:SOT-666; No. Nexperia Nx3008Pbkv,115.MOSFET,PP CH, 30V, 220MA, SOT666; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-220mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.
MOSFET, P CH, 30V, 200MA, SOT323; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.
5V; Threshold Voltage Vgs:750mV; Power Dissipation Pd:500mW; Transistor Case Style:SOT-666; No.MOSFET, N CH, DUAL, 20V, 800MA, SOT666; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:800mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.29ohm; Rds(on) Test Voltage Vgs:4.