Vishay Si2312Cds-T1-Ge3.MOSFET,N CH,20V,6A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0265ohm; Rds(on) Test Voltage Vgs:4.
MOSFET,N CH,60V,0. Vishay 2N7002K-T1-Ge3.3A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:190mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No.
3A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:190mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No.MOSFET,N CH,60V,0. Vishay 2N7002K-T1-Ge3.
3W; Transistor Case Style:SOT-23; No.7A,DIODE,SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.MOSFET,P CH,30V,2.
049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.1W; Transistor Case Style:TO-236; No.
25W; Transistor Case Style:SOT-23; No.0265ohm; Rds(on) Test Voltage Vgs:4.MOSFET,N CH,20V,6A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.
8W; Transistor Case Style:SOT-23; No. Vishay Si2336Ds-T1-Ge3.034ohm; Rds(on) Test Voltage Vgs:4.2A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.
05ohm; Rds(on) Test Voltage Vgs:-4.25W; Transistor Case Style:SOT-23; No. Vishay Si2377Eds-T1-Ge3.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.
MOSFET,N CH,D-S,20V,7.5V; Threshold Voltage Vgs:400mV; Power Dissipation Pd:1.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:4.
Vishay Si4488Dy-T1-Ge3.MOSFET,N CH,DIODE,150V,5A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.041ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:3.
065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:3.MOSFET,N CH,DIODE,200V,4A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:2.
5W; Transistor Case Style:SOIC; No.MOSFET,N CH,DIODE,60V,8A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.