MOSFET, N CH, 25V, 18A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0. Vishay Si4116Dy-T1-Ge3.0071ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:600mV; Power Dissipation Pd:5W; Transistor Case Style:SOIC; No.
MOSFET, N CH, 40V, 30A, PPAK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; P.
5V; Threshold Voltage Vgs:900mV; Power Dissipation Pd:250mW; Transistor Case Style:SC-89; No.14A, SC89; Transistor Polarity:N Channel; Continuous Drain Current Id:140mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:4.
0042ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.MOSFET, P CH, 30V, 50A, PPAK SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.
9W; Transistor Case Style:SOIC; No. Vishay Si7898Dp-T1-Ge3.068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.MOSFET, N CH, 150V, 3A, PPAK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.
MOSFET, P CH, -40V, -50A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.5W; Transistor Case Style:TO-252; No.
185A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-185mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-4.MOSFET, P CH, 60V, 0. Vishay Tp0610K-T1-Ge3.5V; Threshold Voltage Vgs:-2V; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No.
5V; Threshold Voltage Vgs:900mV; Power Dissipation Pd:250mW; Transistor Case Style:SC-75A; No. Vishay Si1031R-T1-Ge3.14A, SC-75; Transistor Polarity:P Channel; Continuous Drain Current Id:-140mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-4.MOSFET ESD, P CH, 20V, 0.
185A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-185mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-2V; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No.MOSFET, P CH, 60V, 0.
1W; Transistor Case Style:SOIC; No.046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3A, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:5.