MOSFET, N CH 3A 80V SSOT-6; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.4V; Power Dis.056ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.
7A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.MOSFET, N CH, 100V, 3.
Onsemi 2N3904Bu.TRANSISTOR, NPN, 40V, 200MA, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:625mW; DC Collector Current:200mA; DC Current Gain hFE:100hFE; Transistor Case Style:TO-92; No.
1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5A, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.
TRANSISTOR NPN 400V 12A TO220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:4MHz; Power Dissipation Pd:100W; DC Collector Current:12A; DC Current Gain hFE:8hFE; Transistor Case Style:TO-220; No. Onsemi Fjp13009H2Tu.
Onsemi Fdd13An06A0.MOSFET, N CH, 60V, 50A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0115ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:115W; Transistor Case Style:TO-252AA; No.
5V; Power Dissipation Pd:2.0079ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.6A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.
TRANSISTOR PNP 60V 0.8A SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power Dissipation Pd:350mW; DC Collector Current:-800mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.. Onsemi Bsr16.
0115ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:115W; Transistor Case Style:TO-252AA; No. Onsemi Fdd13An06A0.MOSFET, N CH, 60V, 50A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.
22A, SSOT6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:4.
TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:350mW; DC Collector Current:800mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-23; No. Onsemi Bsr14.
6-PACK IGBT, MODULE, 15A, 600V 3 PH; Transistor Polarity:N Channel; DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:55W; Collector Emi; Available until stocks are exhausted.
TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:350mW; DC Collector Current:800mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-23; No. Onsemi Bsr14.
5A SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:-; Power Dissipation Pd:350mW; DC Collector Current:500mA; DC Current Gain hFE:110hFE; Transistor Case Style:SOT-23; No.TRANSISTOR NPN 60V 0. Onsemi Bcv71.
5A SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:-; Power Dissipation Pd:350mW; DC Collector Current:500mA; DC Current Gain hFE:110hFE; Transistor Case Style:SOT-23; No.
TRANSISTOR, NPN, 1A, 40V, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:625mW; DC Collector Current:1A; DC Current Gain hFE:300hFE; Transistor Case Style:TO-92; No. Onsemi Pn2222Ata.