Igbt Module, 600V, 200A; Dc Collector Current:200A; Collector Emitter Saturation Voltage Vce(On):600V; Power Dissipation Pd:650W; Junction Temperature, Tj Max:150°C; Igbt Termination:Stud; Collector Emi ,MITSUBISHI ELECTRIC CM200DY-12NF
Semiconduttori - Discreti
Mitsubishi Electric Cm200Dy-12Nf
Specifications of Mitsubishi Electric Cm200Dy-12Nf | |
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Category | Dispositivi elettronici > Circuiti stampati e componenti > Semiconduttori > Transistor |
Instock | instock |
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