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Mitsubishi Electric

Mitsubishi Electric Cm200Dy-12Nf

About The Igbt Module, 600V, 200A; Dc Collector Current:200A; Collector Emitter Saturation Voltage Vce(On):600V; Power Dissipation Pd:650W; Junction Temperature, Tj Max:150°C; Igbt Termination:Stud; Collector Emi |MITSUBISHI ELECTRIC CM200DY-12NF

Igbt Module, 600V, 200A; Dc Collector Current:200A; Collector Emitter Saturation Voltage Vce(On):600V; Power Dissipation Pd:650W; Junction Temperature, Tj Max:150°C; Igbt Termination:Stud; Collector Emi ,MITSUBISHI ELECTRIC CM200DY-12NF

Semiconduttori - Discreti

Mitsubishi Electric Cm200Dy-12Nf

Semiconduttori - Discreti

Specifications of Mitsubishi Electric Cm200Dy-12Nf

CategoryDispositivi elettronici > Circuiti stampati e componenti > Semiconduttori > Transistor
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Mitsubishi Electric Cm200Dy-12Nf
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