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Sharp Pt100Mf0Mp1

About The of Pins:2Pins; Transistor Case Style:-; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Angle of Half Sensitivity ±:15°; Collector Emitter Saturation Voltage Vce(on):0.45mA; Current Ic Typ:2mA; Dark Current:100nA; Fall Time tf:6µs; Nom Sensitivity @ mW/cm²:2mA @ 1mW/cm²; Operating Temperature Max:85°C; Operating Temperature Min:-30°C; Operating Temperature Range:-30°C to +85°C; Peak Spectral Response Wavelength:910nm; Peak Wavelength:910nm; Rise Time:5µs; Storage Temperature Max:95°C; Storage Temperature Min:-40°C; Transistor Polarity:NPN; Transistor Type:Photo

PHOTOTRANSISTOR, SMD; Wavelength Typ:910nm; Viewing Angle:15°; Power Consumption:75mW; No. of Pins:2Pins; Transistor Case Style:-; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Angle of Half Sensitivity ±:15°; Collector Emitter Saturation Voltage Vce(on):0.4V; Continuous Collector Current Ic Max:3.45mA; Current Ic Typ:2mA; Dark Current:100nA; Fall Time tf:6µs; Nom Sensitivity @ mW/cm²:2mA @ 1mW/cm²; Operating Temperature Max:85°C; Operating Temperature Min:-30°C; Operating Temperature Range:-30°C to +85°C; Peak Spectral Response Wavelength:910nm; Peak Wavelength:910nm; Rise Time:5µs; Storage Temperature Max:95°C; Storage Temperature Min:-40°C; Transistor Polarity:NPN; Transistor Type:Photo

Optoelectronics & Displays

Sharp Pt100Mf0Mp1

More from SHARP! PHOTOTRANSISTOR, SMD; Wavelength Typ:910nm; Viewing Angle:15°; Power Consumption:75mW; No.
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Optoelectronics & Displays

Specifications of Sharp Pt100Mf0Mp1

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Sharp Pt100Mf0Mp1
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of Pins:2Pins; Operating Temperature Range:-30°C to +85°C; Peak Forward Current:50mA; Radiometric Power:6mW; Radiometric Power Min:2mW; Reverse Protection Voltage:6V; Storage Temperature Max:95°C; Storage Temperature Min:-40°C; Viewing Angle:10°; Voltage Vf Typ:1.2V; Wavelength Typ:940nm

of Pins:2Pins; Operating Temperature Range:-30°C to +85°C; Peak Forward Current:50mA; Radiometric Power:6mW; Radiometric Power Min:2mW; Reverse Protection Voltage:6V; Storage Temperature Max:95°C; Storage Temperature Min:-40°C; Viewing Angle:10°; Voltage Vf Typ:1.2V; Wavelength Typ:940nm

2V; Operating Temperature Min:-30°C; Operating Temperature Max:85°C; Automotive Qualification Standard:-; Product Range:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Angle of Half Sensitivity ±:10°; External Depth:1.INFRARED EMITTER, 940 NM, SMD; Peak Wavelength:940nm; Angle of Half Intensity:10°; Diode Case Style:SMD; Radiant Intensity (Ie):-; Rise Time:-; Fall Time tf:-; Forward Current If(AV):20mA; Forward Voltage VF Max:1. Sharp Gl100Mn1Mp1.2mm; External Width:2.

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    • of Pins:2Pins; Transistor Case Style:-; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Angle of Half Sensitivity ±:15°; Collector Emitter Saturation Voltage Vce(on):0.4V; Continuous Collector Current Ic Max:3.45mA; Current Ic Typ:2mA; Dark Current:100nA; Fall Time tf:6µs; Nom Sensitivity @ mW/cm²:2mA @ 1mW/cm²; Operating Temperature Max:85°C; Operating Temperature Min:-30°C; Operating Temperature Range:-30°C to +85°C; Peak Spectral Response Wavelength:910nm; Peak Wavelength:910nm; Rise Time:5µs; Storage Temperature Max:95°C; Storage Temperature Min:-40°C; Transistor Polarity:NPN; Transistor Type:Photo

    of Pins:2Pins; Transistor Case Style:-; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Angle of Half Sensitivity ±:15°; Collector Emitter Saturation Voltage Vce(on):0.4V; Continuous Collector Current Ic Max:3.45mA; Current Ic Typ:2mA; Dark Current:100nA; Fall Time tf:6µs; Nom Sensitivity @ mW/cm²:2mA @ 1mW/cm²; Operating Temperature Max:85°C; Operating Temperature Min:-30°C; Operating Temperature Range:-30°C to +85°C; Peak Spectral Response Wavelength:910nm; Peak Wavelength:910nm; Rise Time:5µs; Storage Temperature Max:95°C; Storage Temperature Min:-40°C; Transistor Polarity:NPN; Transistor Type:Photo

    PHOTOTRANSISTOR, SMD; Wavelength Typ:910nm; Viewing Angle:15°; Power Consumption:75mW; No. Sharp Pt100Mf0Mp1.

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    Amp - Te Connectivity 160013

    94AWG; Conductor Area CSA:8mm²; Product Range:SOLISTRAND Series; Insulator Colour:-; Insulator Material:Uninsulated; SVHC:No SVHC (15-Jan-2018); Stud Size - Imperial:10.CRIMP TERMINAL, RING, M5, PK50; Stud Size - Metric:M5; Stud Size - Imperial:#10; Wire Size AWG Max:7.

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    • Sharp Gp2Y1010Au0F

    Sharp Gp2Y1010Au0F

    SENSOR, DUST, OPTICAL; Sensing Method:Retroreflective; Particle Size Min:-; Particle Type:Dust; Sensor Output:-; Supply Voltage:5VDC; Sensor Mounting:SMD; Product Range:-; SVHC:No SVHC (15-Jan-2019); External Depth:30mm;.

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    Sharp Gp2Y0A02Yk0F

    9mm; External Length / Height:13.

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    • of Pins:4Pins; Operating Current DC:7mA; Operating Temperature Max:60°C; Operating Temperature Min:-25°C; Operating Temperature Range:-25°C to +60°C; Peak Wavelength:940nm; Rise Time:400µs; Supply Voltage Max:16VDC; Supply Voltage Min:4.5VDC; Voltage Rating V DC:5V; Wavelength Typ:940nm; Wavelength of Peak Sensitivity:940nm

    of Pins:4Pins; Operating Current DC:7mA; Operating Temperature Max:60°C; Operating Temperature Min:-25°C; Operating Temperature Range:-25°C to +60°C; Peak Wavelength:940nm; Rise Time:400µs; Supply Voltage Max:16VDC; Supply Voltage Min:4.5VDC; Voltage Rating V DC:5V; Wavelength Typ:940nm; Wavelength of Peak Sensitivity:940nm

    5V; Supply Voltage DC Max:16V; Output Current:50mA; Product Range:IS471FE; SVHC:No SVHC (15-Jan-2019); Diode Case Style:Radial Leaded; External Depth:2.4mm; External Width:5mm; Fall Time tf:400µs; Lead Length:15.5mm; No.5mm; External Length / Height:4.

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    • of Pins:2Pins; Transistor Case Style:-; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Angle of Half Sensitivity ±:15°; Collector Emitter Saturation Voltage Vce(on):0.4V; Continuous Collector Current Ic Max:3.45mA; Current Ic Typ:2mA; Dark Current:100nA; Fall Time tf:6µs; Nom Sensitivity @ mW/cm²:2mA @ 1mW/cm²; Operating Temperature Max:85°C; Operating Temperature Min:-30°C; Operating Temperature Range:-30°C to +85°C; Peak Spectral Response Wavelength:910nm; Peak Wavelength:910nm; Rise Time:5µs; Storage Temperature Max:95°C; Storage Temperature Min:-40°C; Transistor Polarity:NPN; Transistor Type:Photo

    of Pins:2Pins; Transistor Case Style:-; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Angle of Half Sensitivity ±:15°; Collector Emitter Saturation Voltage Vce(on):0.4V; Continuous Collector Current Ic Max:3.45mA; Current Ic Typ:2mA; Dark Current:100nA; Fall Time tf:6µs; Nom Sensitivity @ mW/cm²:2mA @ 1mW/cm²; Operating Temperature Max:85°C; Operating Temperature Min:-30°C; Operating Temperature Range:-30°C to +85°C; Peak Spectral Response Wavelength:910nm; Peak Wavelength:910nm; Rise Time:5µs; Storage Temperature Max:95°C; Storage Temperature Min:-40°C; Transistor Polarity:NPN; Transistor Type:Photo

    PHOTOTRANSISTOR, SMD; Wavelength Typ:910nm; Viewing Angle:15°; Power Consumption:75mW; No. Sharp Pt100Mf0Mp1.

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    • of Pins:2Pins; Operating Temperature Range:-30°C to +85°C; Peak Forward Current:50mA; Radiometric Power:6mW; Radiometric Power Min:2mW; Reverse Protection Voltage:6V; Storage Temperature Max:95°C; Storage Temperature Min:-40°C; Viewing Angle:10°; Voltage Vf Typ:1.2V; Wavelength Typ:940nm

    of Pins:2Pins; Operating Temperature Range:-30°C to +85°C; Peak Forward Current:50mA; Radiometric Power:6mW; Radiometric Power Min:2mW; Reverse Protection Voltage:6V; Storage Temperature Max:95°C; Storage Temperature Min:-40°C; Viewing Angle:10°; Voltage Vf Typ:1.2V; Wavelength Typ:940nm

    INFRARED EMITTER, 940 NM, SMD; Peak Wavelength:940nm; Angle of Half Intensity:10°; Diode Case Style:SMD; Radiant Intensity (Ie):-; Rise Time:-; Fall Time tf:-; Forward Current If(AV):20mA; Forward Voltage VF Max:1. Sharp Gl100Mn1Mp1.2mm; External Width:2.

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  • Optoelectronics & Displays
  • SHARP
    • of Pins:2Pins; Transistor Case Style:-; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Angle of Half Sensitivity ±:15°; Collector Emitter Saturation Voltage Vce(on):0.4V; Continuous Collector Current Ic Max:3.45mA; Current Ic Typ:2mA; Dark Current:100nA; Fall Time tf:6µs; Nom Sensitivity @ mW/cm²:2mA @ 1mW/cm²; Operating Temperature Max:85°C; Operating Temperature Min:-30°C; Operating Temperature Range:-30°C to +85°C; Peak Spectral Response Wavelength:910nm; Peak Wavelength:910nm; Rise Time:5µs; Storage Temperature Max:95°C; Storage Temperature Min:-40°C; Transistor Polarity:NPN; Transistor Type:Photo
  • Eletrônicos
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  • SHARP
    • of Pins:2Pins; Operating Temperature Range:-30°C to +85°C; Peak Forward Current:50mA; Radiometric Power:6mW; Radiometric Power Min:2mW; Reverse Protection Voltage:6V; Storage Temperature Max:95°C; Storage Temperature Min:-40°C; Viewing Angle:10°; Voltage Vf Typ:1.2V; Wavelength Typ:940nm
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