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Vishay Sqs411Enw-T1_Ge3 Mosfet, Aecq101, P-Ch, -30V, -16A, 53.6W

About The VISHAY - MOSFET, AECQ101, P-CH, -30V, -16A, 53.6W - SQS411ENW-T1_GE3

VISHAY - MOSFET, AECQ101, P-CH, -30V, -16A, 53.6W - SQS411ENW-T1_GE3

Semiconductors - Discretes > FETs > Single MOSFETs

Vishay Sqs411Enw-T1_Ge3 Mosfet, Aecq101, P-Ch, -30V, -16A, 53.6W

Semiconductors - Discretes > FETs > Single MOSFETs

Specifications of Vishay Sqs411Enw-T1_Ge3 Mosfet, Aecq101, P-Ch, -30V, -16A, 53.6W

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Vishay Sqs411Enw-T1_Ge3 Mosfet, Aecq101, P-Ch, -30V, -16A, 53.6W
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  • Semiconductors - Discretes
  • FETs
  • Single MOSFETs
  • VISHAY
    • Vishay Sqs411Enw-T1_Ge3 Mosfet, Aecq101, P-Ch, -30V, -16A, 53.6W

    Vishay Sqs411Enw-T1_Ge3 Mosfet, Aecq101, P-Ch, -30V, -16A, 53.6W

    VISHAY - MOSFET, AECQ101, P-CH, -30V, -16A, 53.6W - SQS411ENW-T1_GE3.

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  • FETs
  • Single MOSFETs
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    Vishay Sqs407Enw-T1_Ge3 Mosfet, N-Ch, 6A, 20V, Sot-23

    VISHAY - MOSFET, N-CH, 6A, 20V, SOT-23 - SQS407ENW-T1_GE3.

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  • Single MOSFETs
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    YAGEO - CAP, 10PF, 50V, 5%, C0G/NP0, 0402 - CC0402JRNPO9BN100.

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    Yageo Cc0402Jrnpo9Bn100 Cap, 10Pf, 50V, 5%, C0G/np0, 0402

    YAGEO - CAP, 10PF, 50V, 5%, C0G/NP0, 0402 - CC0402JRNPO9BN100.

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