Nexperia Bav70,215.25V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:4A; Operating Temperature Max:150°C; Diode Case Style:TO-236AB; No.DIODE, DUAL, 0.215A, 100V, SOT-23; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):215mA; Forward Voltage VF Max:1.
Nexperia Bat721A,215.DIODE, SCHOTTKY, DUAL; Diode Configuration:Dual Common Anode; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):200mA; Forward Voltage VF Max:550mV; Forward Surge Current Ifsm Max:1A; Operating Temperature Max:150°C; Diode Case Style:SOT-23; No.
.1A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:110hFE; Transistor Case Style:SOT-23; No.of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC846A; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:110; No.
. Nexperia Bc846B,215 TRANSISTOR, NPN, 65V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-23; No.
of Pins:3Pins; Operating Temperature Max:150°C; Product Range:BC807 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-700mV; Continuous Collector Current Ic Max:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:100mA; Device Marking:BC807-40; Gain Bandwidth ft Min:80MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:250; No..5A, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:80MHz; Power Dissipation Pd:250mW; DC Collector Current:-500mA; DC Current Gain hFE:250hFE; Transistor Case Style:TO-236AB; No.
1A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:520hFE; Transistor Case Style:SOT-23; No.
of Pins:3Pins; Operating Temperature Max:150°C; Product Range:BC847 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC847; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:110; Hfe Typ:125; No. Nexperia Bc847,215 TRANSISTOR,BIPOL.., NPN, 45V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:110hFE; Transistor Case Style:SOT-23; No.
of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC846; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:110; Hfe Typ:125; No.. Nexperia Bc846,215 TRANSISTOR, NPN, 65V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:110hFE; Transistor Case Style:SOT-23; No.